Samsung today announced the industry's first DDR-II device, a high-density 512Mb DDR-II SDRAM, that it expects to be the next-generation mainstream DRAM technology for high-speed systems.
Low 1.8-volt Vdd
Data transfer rates of 533Mbps that can be extended to a maximum of 667Mbps for networks and special system environments.
Off-chip driver calibration (OCD) to maintain optimum driver strength
On-die termination (ODT) to ensure optimum signal waveform
Posted CAS, a command control method to enhance bus efficiency.
60-ball BGA package maximizes performance
In March 2001, prior to the development of the 512Mb DDR-II SDRAM, Samsung created a 2.5V, 128Mb
DDR-II prototype. In parallel with Samsung's device design, and in an effort to validate the key DDR-II technology attributes, IBM developed a first-generation DDR-II memory interface chip in conjunction with a new registered DIMM. Samsung will commence volume production of the new 512Mb DDR-II SDRAM device in Q3 2003. The timely introduction of these next-generation DDR-II sample devices is in line with the company's strategy to expand its DDR DRAM market share to more than 50 percent in 2002. Samsung intends to maintain its leadership stance in high value-added memory by being first to market with leading-edge technologies in a wide range of configurations and densities
